dc.contributor.author |
Aradi, E. |
|
dc.contributor.author |
Naidoo, S.R. |
|
dc.contributor.author |
Billing, D.G. |
|
dc.contributor.author |
Wamwangi, D. |
|
dc.contributor.author |
Motochi, I. |
|
dc.contributor.author |
Derry, T.E. |
|
dc.date.accessioned |
2017-05-31T07:53:04Z |
|
dc.date.available |
2017-05-31T07:53:04Z |
|
dc.date.issued |
2014-03 |
|
dc.identifier.uri |
http://hdl.handle.net/123456789/4794 |
|
dc.description |
Full text |
en_US |
dc.description.abstract |
The vibrational mode for the cubic symmetry of boron nitride (BN) has been produced by boron ion
implantation of hexagonal boron nitride (h-BN). The optimum fluence at 150 keV was found to be
5 Â 1014 ions/cm2. The presence of the c-BN phase was inferred using glancing incidence XRD (GIXRD)
and Fourier Transform Infrared Spectroscopy (FTIR). After implantation, Fourier Transform Infrared Spec-
troscopy indicated a peak at 1092 cmÀ1 which corresponds to the vibrational mode for nanocrystalline
BN (nc-BN). The glancing angle XRD pattern after implantation exhibited c-BN diffraction peaks relative
to the implantation depth of 0.4 lm. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Nuclear Instruments and Methods in Physics Research B |
en_US |
dc.relation.ispartofseries |
331 (2014) 140–143; |
|
dc.subject |
Ion implantation |
en_US |
dc.subject |
Boron nitride |
en_US |
dc.subject |
Glancing incidence XRD |
en_US |
dc.subject |
Fourier Transform Infrared Spectroscopy |
en_US |
dc.title |
Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study |
en_US |
dc.type |
Article |
en_US |